FDMC86259P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 107 mW at VGS = −10 V, ID = −3 A
* Max rDS(on) = 137 mW at VGS = −6 V, ID = −2,7 A
* Very Low RDS−on Mid Voltage P Channel Silicon Technology
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as well as
Load Witch Applications
* 100% UIL Tested
* This Device is Pb−Free, Halide Free and RoHS Compliant
Ap.
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 107 mW at VGS = −10 V, I.
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